Semiconductor device, display device, and electronic appliance
US8253135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2010 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jun 3, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13629
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.