CMOS shared amplifier pixels with output signal wire below floating diffusion interconnect for reduced floating diffusion capacitance
US8253214B2 · kind B2 · utility
10Cited by
6References
6Claims
0Family size
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Key dates
| Filing date | May 25, 2006 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Oct 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
An image sensor includes a unit cell having a plurality of pixels; the unit cell comprising an amplifier input transistor that is shared by the plurality of pixels; a plurality of floating diffusions that are joined by a floating diffusion interconnect layer and are connected to the amplifier input transistor; and an interconnect layer which forms an output signal wire which shields the floating diffusion interconnect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.