Ceramic electronic component and method for producing same
US8254083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2010 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There are provided a ceramic electronic component and a method for producing the ceramic electronic component, where a ground electrode layer can be directly coated with lead-free solder without lowering reliabilities. Terminal electrode 3 is provided with a ground electrode layer 21 of Cu having been formed by firing, a solder layer 22 formed of a lead-free solder based on five elements of Sn—Ag—Cu—Ni—Ge, and a diffusion layer 23 having been formed by the diffusion of Ni between the ground electrode layer 21 and the solder layer 22. Because the diffusion layer 23 of Ni is formed between the ground electrode layer 21 and the solder layer 22, the diffusion layer 23, which functions as a barrier layer, suppresses the solder leach of Cu from the ground electrode layer 21. The diffusion layer 23 of Ni can also suppress the growth of fragile intermetallic compounds of Sn—Cu. Therefore, a decrease in the bonding strength between the ground electrode layer 21 and the solder layer 22 can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.