High-voltage-resistant rectifier with standard CMOS transistors
US8254152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2009 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Oct 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M7/219
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-voltage-resistant rectifier with standard CMOS transistors is disclosed in present invention. In a bridge full-wave rectifier comprising four MOS transistors, extra transistors are connected in series between the transistors which endure high voltage and the input to decrease the voltage imposed on the gate of them; moreover, the present invention provides a way to divide voltage imposed between the gate and the source of the said transistors by connecting in series with extra transistors, so it is achieved to implement a high-voltage-resistant rectifier with standard low voltage CMOS transistors without additional process complexity, and decreases manufacture and process costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.