Preloading data into a flash storage device
US8254170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2009 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jul 14, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Programmer's data is initially stored in a memory device of the storage device by using an MBC storage scheme. After the storage device is embedded in a host device, the programmer's data is internally read from the memory device by using conventional read reference voltages, and the number of erroneous data bits in the programmer's data is calculated. If the programmer's data includes an uncorrectable number of erroneous data bits, the programmer's data is iteratively reread by using unconventional read reference voltages with decreased levels. The iteration process, which includes decreasing the level of the read reference voltages and recalculating the number of erroneous data bits, is terminated when the number of erroneous data bits in the programmer's is less than or equals a predetermined number of erroneous data bits, after which the storage device restores the programmer's data and conventionally rewrites it into the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.