Semiconductor device and method of manufacturing the same
US8254175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2009 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A semiconductor device includes a semiconductor region, a tunnel insulating film formed on the semiconductor region, a charge-storage insulating film formed on the tunnel insulating film, a block insulating film formed on the charge-storage insulating film, and a control gate electrode formed on the block insulating film, wherein the tunnel insulating film comprises a first region which is formed on a surface of the semiconductor region and contains silicon and oxygen, a second region which contains silicon and nitrogen, a third region which is formed on a back surface of the charge-storage insulating film and contains silicon and oxygen, and an insulating region which is formed at least between the first region and the second region or between the second region and the third region, and contains silicon and nitrogen and oxygen and the second region is formed between the first region and the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.