(Al,Ga,In)N diode laser fabricated at reduced temperature
US8254423B2 · kind B2 · utility
2Cited by
4References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 1, 2009 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jun 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.