Patent · US Active

Multi-level cell memory device and method thereof

US8255770B2 · kind B2 · utility

35Cited by
7References
20Claims
0Family size

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Key dates

Filing dateMay 9, 2011
Grant dateAug 28, 2012
Priority date
Expiry dateMay 9, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A Multi-Level Cell (MLC) memory device and method thereof are provided. The example MLC memory device may be configured to perform data operations, and may include an MLC memory cell, a first coding device performing a first coding function, the first coding function being one of an encoding function and a decoding function, a second coding device performing a second coding function, the second coding function being one of an encoding function and a decoding function and a signal module configured to perform at least one of instructing the MLC memory cell to store data output by the second coding device if the first and second coding functions are encoding functions, and generating a demapped bit stream based on data retrieved from the MLC memory cell if the first and second coding functions are decoding functions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.