Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
US8257561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2010 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Dec 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.