Double rie damascene process for nose length control
US8257597B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2010 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49048
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods of forming a write pole are disclosed. A first photomask having a first opening over one of a yoke region and a pole tip region of the write pole is formed over an insulation layer having an insulator material. A first etch process is performed on the insulation layer via the first opening, the first etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region. A second photomask having a second opening over the other one of the yoke region and the pole tip region is formed over the insulation layer. A second etch process is performed on the insulation layer via the second opening, the second etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.