Semiconductor photodetectors

US8257997B2 · kind B2 · utility

Assignee

• Sifotonics Technologies (USA) Inc. · US

Inventors

• Liang-Hsiang Chen · Taichung, TW
• Chingyin Hong · Lexington, US
• Fuwan Gan · Shanghai, CN
• Dong Pan · Taipei, TW

Key dates

• Filing date: Oct 17, 2008
• Grant date: Sep 4, 2012
• Expiry date: Jul 20, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

In one aspect, a method includes forming a pit in a top surface of a substrate by removing a portion of the substrate and growing a semiconductor material with a bottom surface on the pit, the semiconductor material different than the material of the substrate. The pit has a base recessed in the top surface of the substrate. In another aspect, a structure includes a substrate having a top surface, the substrate including at least one pit having a base lower than the top surface of the substrate, and a semiconductor material having a bottom surface formed on the base of the pit.