Thin film transistor and method for preparing the same
US8258023B2 · kind B2 · utility
56Cited by
5References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 25, 2008 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Feb 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.