Use of a metal complex as an n-Dopant for an organic semiconducting matrix material, organic of semiconducting material and electronic component, and also a dopant and ligand and process for producing same

US8258501B2 · kind B2 · utility

Assignee

• Novaled GmbH · DE

Inventors

• Ansgar Werner · Dresden, DE
• Olaf Kuhl · Greifswald, DE
• Simon Gessler · Mannheim, DE
• Horst Hartmann · Dresden, DE
• Andre Grussing · Dresden, DE
• Michael Limmert · Dresden, DE
• Andrea Lux · Dresden, DE
• Kentaro Harada · Yokohama, JP

Key dates

• Filing date: Mar 3, 2005
• Grant date: Sep 4, 2012
• Expiry date: Jun 28, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.