Nitride semiconductor light emitting device
US8258539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2010 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Jul 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.