Avalanche photodiode

US8258594B2 · kind B2 · utility

Assignee

• PNSensor GmbH · DE

Inventors

• Rainer Richter · Munich, DE
• Ladislav Andricek · Pocking, DE
• Gerhard Lutz · Munich, DE

Key dates

• Filing date: Jun 18, 2008
• Grant date: Sep 4, 2012
• Expiry date: May 3, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/107

Abstract

The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside the laterally delimited lower diode layer (16), while the quenching resistance layer (18) is screened from the depletion electrode (15) by the lower diode layer (16) and is ther…