Bipolar junction transistors having a fin

US8258602B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Po-Yao Ke · Jiuru, TW
• Tao Wen Chung · San Jose, US
• Shine C. Chung · San Jose, US
• Fu-Lung Hsueh

Key dates

• Filing date: Nov 13, 2009
• Grant date: Sep 4, 2012
• Expiry date: Mar 12, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

Design and methods for fabricating bipolar junction transistors are described. In one embodiment, a semiconductor device includes a first fin comprising a first emitter region, a first base region, and a first collector region. The first emitter region, the first base region, and the first collector region form a bipolar junction transistor. A second fin is disposed adjacent and parallel to the first fin. The second fin includes a first contact to the first base region.