Copper interconnection, method for forming copper interconnection structure, and semiconductor device
US8258626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2009 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Jul 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.