Implantable microelectronic device and method of manufacture
US8258635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2010 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.