Thin-oxide device protection circuits for data converters
US8259424B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 2009 |
| Grant date | Sep 4, 2012 |
| Priority date | — |
| Expiry date | Jun 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M1/1295
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
One embodiment features an electrical circuit comprising: a high-voltage input configured to receive a high voltage into the electrical circuit; a low-voltage input configured to receive a low voltage into the electrical circuit; a thin-oxide circuit comprising a thin-oxide metal-oxide-semiconductor field-effect transistor (MOSFET); and a protection circuit configured to protect the thin-oxide circuit from the high voltage, wherein the protection circuit comprises a thick-oxide MOSFET clamp circuit, and an adaptive voltage reference circuit configured to provide an adaptive reference voltage, wherein the thick-oxide MOSFET clamp circuit is biased by the adaptive reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.