Micro piezoresistive pressure sensor and manufacturing method thereof
US8261617B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2008 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Jun 27, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.