Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process
US8262797B1 · kind B1 · utility
18Cited by
5References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 11, 2008 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | May 26, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A weir is extended vertically to define an optimal annular gap between the top of the weir and the underside of a super-adjacent heat shield. The annular gap provides a high velocity stream of argon gas to be directed from the growth region to the melt region to substantially eliminate the transport of airborne particles from the melt region to the growth region. The tall weir may be configured as a modular, reusable weir extension supportably engaged with an outer (and/or inner) weir.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.