Self-releasing resist material for nano-imprint processes

US8262975B2 · kind B2 · utility

Assignee

• HGST Netherlands, B.V. · NL

Inventors

• Margaret E. Best · San Jose, US
• Xing-Cai Guo · Lo Wu, CN
• Thomas E. Karis · Aromas, US
• Dan S. Kercher · Santa Cruz, US
• Charles Mathew Mate · San Jose, US
• Tsai-Wei Wu · San Jose, US

Key dates

• Filing date: Nov 11, 2008
• Grant date: Sep 11, 2012
• Expiry date: Nov 19, 2030

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C08L33/08
• WIPO field: Macromolecular chemistry, polymers
• WIPO sector: Chemistry

Abstract

Nanoimprint lithography using resist material with the addition of a surfactant is described. A template release layer is formed on a pattern of a template. A non-ionic surfactant is added to a resist material to form a mixed resist material. The resist material may comprise a hydrocarbon material having an unsaturated bond, such as an acrylate material. The surfactant may comprise polyalkylene glycol or an organically modified polysiloxane. A resist layer is then formed on a substrate from the mixed resist material. The surfactant added to the resist material forms a resist release layer on the surface of the resist layer. The template is then pressed into the resist layer, where the template release layer and the resist release layer are between the pattern of the template and the resist layer.