Patent · US Active

Bond pad isolation and current confinement in an LED using ion implantation

US8263422B2 · kind B2 · utility

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4References
9Claims
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Key dates

Filing dateApr 20, 2011
Grant dateSep 11, 2012
Priority date
Expiry dateApr 20, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8162

Abstract

An improved method of creating LEDs is disclosed. Rather than using a dielectric coating to separate the bond pads from the top surface of the LED, this region of the LED is implanted with ions to increase its resistivity to minimize current flow therethrough. In another embodiment, a plurality of LEDs are produced on a single substrate by implanting ions in the regions between the LEDs and then etching a trench, where the trench is narrower than the implanted regions and positioned within these regions. This results in a trench where both sides have current confinement capabilities to reduce leakage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.