Dielectric punch-through stoppers for forming FinFETs having dual fin heights
US8263462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Dec 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.