Process for the deposition of an anti-reflection film on a substrate
US8263489B2 · kind B2 · utility
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2References
13Claims
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Assignee
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Key dates
| Filing date | Jan 21, 2011 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for the deposition of an anti-reflection film on a substrate is disclosed. A substrate including a plurality of solar cell structures is provided and placed in a vacuum chamber with a target including silicon. A flow of a nitrogen-containing reactive gas into the vacuum chamber is set to a first value while a voltage between the target and ground is switched off and then increased to a second value. A voltage is applied between the target and ground, whereby a film of silicon and nitrogen is deposited on the substrate in a flow of the nitrogen-containing reactive gas which is higher than the first value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.