Patent · US Active

Photoelectrochemical etching for laser facets

US8263500B2 · kind B2 · utility

1Cited by

4References

22Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Adele Tamboli · Pasadena, US
Evelyn L. Hu · Cambridge, US
Steven P. DenBaars · Goleta, US
Arpan Chakraborty · Goleta, US

Key dates

Filing date	Feb 1, 2010
Grant date	Sep 11, 2012
Priority date	—
Expiry date	Feb 1, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/32341
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.