Multijunction solar cell with a bypass diode
US8263855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2010 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
Abstract
Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or “turning on” the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.