Stacked photovoltaic device
US8263859B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 27, 2006 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An aspect of the present invention provides a stacked photovoltaic device that comprises a first power generating unit including a first semiconductor layer made of a substantially intrinsic non-single crystal semiconductor layer which functions as a photoelectric conversion layer; and a second power generating unit formed above the first power generating unit, the second power generating unit including a second semiconductor layer made of a substantially intrinsic non-crystalline semiconductor layer which functions as a photoelectric conversion layer. In the stacked photovoltaic device, a first density of an element mainly constituting the first semiconductor layer of the first power generating unit is lower than a second density of an element mainly constituting the second semiconductor layer of the second power generating unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.