Directional gas injection for an ion source cathode assembly
US8263944B2 · kind B2 · utility
3Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2008 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Jun 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/061
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.