Phase change memory device
US8263963B2 · kind B2 · utility
2Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2011 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Apr 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.