Semiconductor device with a protection diode
US8264000B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Nov 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate, a semiconductor region, a first and second electrodes. The semiconductor region is provided on the semiconductor substrate via an insulating film. The semiconductor region includes a protection diode. An overvoltage causes breakdown of the protection diode. A PN junction of the protection diode is exposed at an end face of the semiconductor region. A first and second electrodes are provided distally to the exposed end face of the PN junction. The first and second electrodes are connected to the semiconductor region to provide a current to the protection diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.