Patent · US Active

Semiconductor device including a magnetic tunnel junction and method of manufacturing the same

US8264053B2 · kind B2 · utility

7Cited by
2References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 29, 2009
Grant dateSep 11, 2012
Priority date—
Expiry dateFeb 11, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B61/22
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

To provide a semiconductor device that has an improved adhesion between a bottom conductive layer and a protection film protecting an MTJ element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.