CMOS photogate 3D camera system having improved charge sensing cell and pixel geometry
US8264581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2009 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A photosurface for receiving and registering light from a scene, the photosurface comprising: a first semiconductor region in which electron-hole pairs are generated responsive to light incident on the photosurface; a single, first conductive region substantially overlaying all of the first semiconductor region; at least one second semiconductor region surrounded by the first semiconductor region; a different second conductive region for each second semiconductor region that surrounds the second semiconductor region and is electrically isolated from the first conductive region; wherein when the second conductive region is electrified positive with respect to the first conductive region, electrons generated by light incident on the first semiconductor region are collected in the second semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.