Photocatalytic implant having a sensor
US8267883B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2010 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Aug 19, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J35/39
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
An implant comprises a photocatalytic layer on at least one surface and is adapted to act as a sensor. In some embodiments, the photocatalytic layer is a semiconductor oxide that is doped. According to some embodiments, the implant comprises a wave guide. According to some embodiments the implant comprises a light port. According to some embodiments, the implant comprises a reflective material on a surface of the waveguide. According to some embodiments the implant comprises a composite material comprising a first material that has a transmissivity when exposed to a predetermined wavelength of light and a second material that has photocatalytic activity when exposed to the predetermined wavelength of light. According to some embodiments the implant comprises a light source adapted to irradiate the photocatalytic surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.