Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same
US8268397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2008 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Sep 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24331
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.