Field-effect transistor and method for fabricating field-effect transistor
US8268666B2 · kind B2 · utility
8Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Jul 7, 2010 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Nov 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.