Patent · US Active

Gallium nitride for liquid crystal electrodes

US8268707B2 · kind B2 · utility

4Cited by
13References
8Claims
0Family size

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Inventors

Key dates

Filing dateJun 17, 2010
Grant dateSep 18, 2012
Priority date—
Expiry dateFeb 8, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8503
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.