Thin film thermoelectric element including stress releasing elements
US8269097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2006 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Oct 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/17
Abstract
A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.