Semiconductor photodetector with transparent interface charge control layer and method thereof

US8269222B2 · kind B2 · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Paul H. Shen · North Potomac, US
• Michael Wraback · Germantown, US
• Anand Sampath · Corona, US

Key dates

• Filing date: May 24, 2011
• Grant date: Sep 18, 2012
• Expiry date: May 24, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer formed of a first semiconductor material crystal lattice which terminates at an interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer substantially transparent to light in the predetermined wavelength range and having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge so as to increase the collection of photogenerated carriers by the photodetector. ; and a methodproviding the above.