Structure of high-frequency components with low stray capacitances
US8269252B2 · kind B2 · utility
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9References
20Claims
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Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Jun 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.