Method and system for providing an improved hard bias structure
US8270126B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2008 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Dec 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/123
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for providing a hard bias structure include providing a seed layer for a hard bias structure. The seed layer has a lattice constant and a natural growth texture. The method and system further include depositing the hard bias layer for the hard bias structure on the seed layer. The natural growth texture of the seed layer corresponds to a texture for the hard bias layer. The hard bias layer has a bulk lattice constant. Providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant. Depositing the hard bias layer further includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.