Enhanced silicon all-optical modulator
US8270778B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Jan 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/2257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A single-photon absorption all-optical signal-processing device, systems employing the same, and methods of making and using the same. Illustrative examples are provided based on silicon semiconductor technology that employs rectangular waveguides fabricated on SOI wafers. In some embodiments, it is observed that the waveguides have surface state density, σ, of not less than 1.5×1018 cm−1s−1mW−1 to provide a single-photon absorption operation mode. In some embodiments, some portion of the ridge waveguide structure has a surface to volume ratio of at least 18 μm−1, computed using a unit length of 1 μm of the waveguide, with the width and depth dimensions of the waveguide being measured in units of microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.