Methods of depositing a ruthenium film
US8273408B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2008 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Mar 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O2). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH3) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.