Method for production of a radiation-emitting semiconductor chip

US8273593B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Berthold Hahn · Hemau, DE
• Stephan Kaiser · Regensburg, DE
• Volker Harle · Hemau, DE

Key dates

• Filing date: Feb 15, 2011
• Grant date: Sep 25, 2012
• Expiry date: Feb 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/018

Abstract

A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.