Silicon thin film deposition for photovoltaic device applications
US8273595B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 7, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Sep 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi-junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as “value-added” products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.