Ultrathin spacer formation for carbon-based FET

US8274072B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Zhihong Chen · Syracuse, US
• Dechao Guo · Niskayuna, US
• Shu-Jen Han · Somers, US
• Kai Zhao · Willowbrook, US

Key dates

• Filing date: Feb 22, 2012
• Grant date: Sep 25, 2012
• Expiry date: Feb 22, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6741

Abstract

A carbon-based field effect transistor (FET) includes a substrate; a carbon layer located on the substrate, the carbon layer comprising a channel region, and source and drain regions located on either side of the channel region; a gate electrode located on the channel region in the carbon layer, the gate electrode comprising a first dielectric layer, a gate metal layer located on the first dielectric layer, and a nitride layer located on the gate metal layer; and a spacer comprising a second dielectric layer located adjacent to the gate electrode, wherein the spacer is not located on the carbon layer.