Metal oxynitride semiconductor containing zinc
US8274078B2 · kind B2 · utility
355Cited by
7References
5Claims
0Family size
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Key dates
| Filing date | Apr 23, 2008 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Nov 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and In and at least one element selected from the group consisting of Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.