Patent · US Active

Semiconductor device and a method of manufacturing the same

US8274157B2 · kind B2 · utility

3Cited by
2References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 16, 2010
Grant dateSep 25, 2012
Priority date
Expiry dateDec 16, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1306
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device having redistribution interconnects in the WPP technology and improved reliability, wherein the redistribution interconnects have first patterns and second patterns which are electrically separated from each other within the plane of the semiconductor substrate, the first patterns electrically coupled to the multi-layer interconnects and the floating second patterns are coexistent within the plane of the semiconductor substrate, and the occupation ratio of the total of the first patterns and the second patterns within the plane of the semiconductor substrate, that is, the occupation ratio of the redistribution interconnects is 35 to 60%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.