Detection circuit with improved anti-blooming circuit
US8274334B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/621
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The detection circuit comprises a photodiode connected to an input of a capacitive transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and an output of the capacitive transimpedance amplifier. The anti-blooming circuit comprises a field effect transistor connected between the input and output of the capacitive transimpedance amplifier. The transistor is of pMOS type when the input of the capacitive transimpedance amplifier is connected to a cathode of the photodiode. The transistor is of nMOS type when the input of the capacitive transimpedance amplifier is connected to an anode of the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.