Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
US8277671B2 · kind B2 · utility
4Cited by
11References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 18, 2007 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Sep 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.